FDG314P
Description
This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This device is designed especially for battery power applications such as notebook puters and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Features
- -0.65 A, -25 V. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS = -2.7 V.
- -
- Very low gate drive requirements allowing direct operation in 3V cirucuits (VGS(th) <1.5 V). Gate-Source Zener for ESD ruggedness (>6 k V Human Body Model). pact industry standard SC70-6 surface mount package.
Applications
- Power Management
- Load switch
- Signal switch
SC70-6
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD T J, T stg ESD Drain-Source Voltage Gate-Source Voltage Drain...
