This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize onstate resistance at low gate drive conditions.
Key Features
-0.65 A, -25 V. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS = -2.7 V.
Very low gate drive requirements allowing direct operation in 3V cirucuits (VGS(th) 6 kV Human Body Model). Compact industry standard SC70-6 surface mount package.
Full PDF Text Transcription for FDG314P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
FDG314P. For precise diagrams, and layout, please refer to the original PDF.
FDG314P July 2000 FDG314P Digital FET, P-Channel General Description This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s p...
View more extracted text
field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This device is designed especially for battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. Features • -0.65 A, -25 V. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS = -2.7 V. • • • Very low gate drive requirements allowing direct operation in 3V cirucuits (VGS(th) <1.5 V). Gate-Sourc
FDG314P Datasheet
