FDG314P p-channel equivalent, digital fet/ p-channel.
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-0.65 A, -25 V. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS = -2.7 V.
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Very low gate drive requirements allowing direct operation in 3V .
such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltage.
This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive condition.
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